2SA1695
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC4468)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1695
–140
–140
–6
–10
–4
100(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
2SA1695
–10
max
–10
max
–140
min
50
min
∗
–0.5
max
20
typ
400
typ
V
MHz
pF
20.0min
4.0max
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
1.4
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–140V
V
EB
=–6V
I
C
=–50mA
V
CE
=–4V, I
C
=–3A
I
C
=–5A, I
B
=–0.5A
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
2
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–60
R
L
(Ω)
12
I
C
(A)
–5
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(A)
–0.5
I
B2
(A)
0.5
t
on
(
µ
s)
0.17typ
t
stg
(
µ
s)
1.86typ
t
f
(
µ
s)
0.27typ
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
–10
–4
00
mA
V
C E
( sat ) – I
B
Characteristics
(Typical)
–3
C o l l e c t o r - E m i t t er S a tu r a t i o n Vo lt a g e V
C E( sat)
( V )
I
C
– V
BE
Temperature Characteristics
(Typical)
–1 0
( V
C E
= –4 V )
–3
00
mA
–2
00
mA
–15
0m
A
C ol l e c t o r C ur r en t I
C
( A )
–100
mA
–75mA
–2
–6
C o l l ec to r C u r r e n t I
C
( A)
–8
–8
–6
–50mA
–4
–25mA
mp)
e Te
(Ca
se
–1
25˚C
125
I
B
=–10mA
– 5A
0
0
– 0. 5
– 1. 0
– 1. 5
–2 .0
0
0
0
0
–1
–2
–3
–4
–30˚C
I
C
= – 10 A
–2
˚C
–2
(Case
(Cas
Temp
–4
Tem
p)
–1
Ba s e - E m i t t or V o l t a ge V
BE
( V )
)
–1.5
Co ll e ct o r- Em i t t er Vo l ta ge V
C E
( V)
Ba se C u r r e nt I
B
( A)
(V
C E
= – 4 V )
200
D C Cu rr en t Ga i n h
FE
200
1 25 ˚ C
( V
C E
= – 4V)
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
h
F E
– I
C
Characteristics
(Typical)
h
F E
– I
C
Temperature Characteristics
(Typical)
θ
j - a
– t Characteristics
3
Typ
100
D C Cu rr en t Ga i n h
FE
2 5˚ C
100
– 3 0˚ C
1
0. 5
50
50
30
–0.02
– 0. 1
–0 .5
–1
–5
–10
30
–0.02
– 0. 1
– 0 .5
–1
–5
– 10
0. 1
1
10
100
Time t(ms)
10 0 0 2 00 0
C ol l e ct or C urre nt I
C
( A)
C o ll e ct o r Cu r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
=– 1 2 V )
30
–30
Safe Operating Area
(Single Pulse)
100
P c – Ta Derating
–10
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
10
0m
M ax im um P o w e r Di s s i p a t i o n P
C
( W)
W
Co llec t o r Cu r r e n t I
C
(A )
20
–5
DC
ith
3m
s
In
Typ
fin
s
ite
he
50
10
ms
at
si
nk
–1
– 0 .5
Without Heatsink
Natural Cooling
10
0
0.02
0.1
1
10
– 0 .1
–3
–5
– 10
–5 0
– 1 00
–2 0 0
3.5
0
Without Heatsink
0
25
50
75
1 00
125
15 0
Emi t t e r Cu rre nt I
E
(A)
Co l le c to r - E m it t er Vo l ta ge V
C E
( V)
Am b i e n t T em p er at u r e T a ( ˚ C )
29
SANKEN [ SANKEN ELECTRIC ]
