2SA1694
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC4467)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1694
–120
–120
–6
–8
–3
80(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
2SA1694
–10
max
–10
max
–120
min
50
min
∗
–1.5
max
20
typ
300
typ
V
MHz
pF
20.0min
4.0max
3
1.05
+0.2
-0.1
5.45
±0.1
B
C
E
5.45
±0.1
0.65
+0.2
-0.1
1.4
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–120V
V
EB
=–6V
I
C
=–50mA
V
CE
=–4V, I
C
=–3A
I
C
=–3A, I
B
=–0.3A
V
CE
=–12V, I
E
=0.5A
V
CB
=–10V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
19.9
±0.3
V
4.0
a
b
ø3.2
±0.1
2
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
R
L
(Ω)
10
I
C
(A)
–4
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(A)
–0.4
I
B2
(A)
0.4
t
on
(
µ
s)
0.14typ
t
stg
(
µ
s)
1.40typ
t
f
(
µ
s)
0.21typ
Weight : Approx 6.0g
a. Type No.
b. Lot No.
I
C
– V
C E
Characteristics
(Typical)
–8
50
V
C E
( sat ) – I
B
Characteristics
(Typical)
–3
C o l l ec to r - Em i t t er S a t ur a t i o n Vo l ta g e V
CE (sat)
(V )
I
C
– V
B E
Temperature Characteristics
(Typical)
–8
( V
CE
= –4 V )
–3
–2
00
m
m
A
–1
50
mA
–100
mA
A
C o l l e c t o r Cu r r e n t I
C
( A)
–6
–75mA
C o l l e c t o r C u r r e nt I
C
( A)
–6
–2
–50mA
–4
–4
mp)
mp)
Cas
–1
I
C
= – 8 A
–4 A
–2 A
0
0
–0.1 –0.2 –0.3 –0.4 –0.5 –0.6 –0.7 –0.8 –0.9 –1.0
Bas e C ur r e nt I
B
( A)
e Te
˚C (
25˚C
125
I
B
=–10mA
0
0
–1
–2
–3
–4
0
0
–0 . 5
–30˚
C (C
–2
–2
(Cas
ase
–1.0
Tem
e Te
–25mA
p)
–1.5
Col l e ct or - Em it te r V ol tag e V
C E
( V)
B a s e - Em i t t o r Vo l ta g e V
B E
( V )
h
F E
– I
C
Characteristics
(Typical)
(V
C E
=– 4 V )
200
D C Cu rr en t Ga i n h
F E
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= – 4 V)
300
D C Cu r r en t G a i n h
FE
Transient Thermal Resistance
θ
j -a
( ˚ C / W )
3
θ
j - a
– t Characteristics
Typ
100
12 5˚ C
25 ˚ C
100
–3 0 ˚ C
1
50
50
0.5
30
–0.02
– 0. 1
– 0. 5
–1
–5
–8
30
–0.02
– 0. 1
– 0. 5
–1
–5 –8
0.3
1
10
Time t(ms)
100
10 0 0
C ol l ec t or Curre nt I
C
(A )
C ol l ec t or C ur r en t I
C
( A )
f
T
– I
E
Characteristics
(Typical)
(V
C E
=– 1 2 V )
30
–20
Safe Operating Area
(Single Pulse)
80
10
m
s
Pc – Ta Derating
Typ
20
C olle c t or Cu r r e n t I
C
(A )
–5
DC
M ax im um P o we r Di s s i p a ti o n P
C
( W )
–10
Cu t-o ff F r e q u e n c y f
T
( M H
Z
)
100ms
60
W
ith
In
fin
ite
he
40
at
si
–1
nk
10
–0.5
Without Heatsink
Natural Cooling
20
Without Heatsink
0
0.02
0. 0 5 0. 1
0.5
1
5
8
–0.1
–5
–10
– 50
–1 00
– 20 0
3. 5
0
0
25
50
75
100
125
1 50
Emi t t e r C u rren t I
E
(A )
C o ll e ct o r - Em i t te r Vo lt a ge V
C E
( V)
Am b i e n t T e m p er a t u r e T a( ˚ C )
28
SANKEN [ SANKEN ELECTRIC ]
