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2SA1494P 参数 Datasheet PDF下载

2SA1494P图片预览
型号: 2SA1494P
PDF下载: 下载PDF文件 查看货源
内容描述: [Power Bipolar Transistor, 17A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 3 Pin, MT-200, 3 PIN]
分类和应用: 晶体晶体管功率双极晶体管放大器局域网
文件页数/大小: 1 页 / 27 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
2SA1494
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC3858)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SA1494
–200
–200
–6
–17
–5
200(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
Application :
Audio and General Purpose
(Ta=25°C)
2SA1494
–100
max
–100
max
–200
min
50
min
–2.5
max
20
typ
500
typ
V
MHz
pF
20.0min
4.0max
2
3
1.05
+0.2
-0.1
5.45
±0.1
5.45
±0.1
B
C
E
0.65
+0.2
-0.1
3.0
+0.3
-0.1
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–200V
V
EB
=–6V
I
C
=–50mA
V
CE
=–4V, I
C
=–8A
I
C
=–10A, I
B
=–1A
V
CE
=–12V, I
E
=1A
V
CB
=–10V, f=1MHz
External Dimensions
MT-200
36.4
±0.3
24.4
±0.2
2-ø3.2
±0.1
9
7
21.4
±0.3
2.1
6.0
±0.2
Unit
µ
A
µ
A
V
a
b
∗h
FE
Rank Y(50 to 100), P(70 to 140), G(90 to 180)
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–40
R
L
(Ω)
4
I
C
(A)
–10
V
BB1
(V)
–10
V
BB2
(V)
5
I
B1
(A)
–1
I
B2
(A)
1
t
on
(
µ
s)
0.6typ
t
stg
(
µ
s)
0.9typ
t
f
(
µ
s)
0.2typ
Weight : Approx 18.4g
a. Type No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
–17
A
.5
–1
V
CE
(sat ) – I
B
Characteristics
(Typical)
–3
Co l l e c t o r - E m i tt e r Sa t u r a t i o n V o lt a ge V
C E( sat)
( V )
I
C
– V
B E
Temperature Characteristics
(Typical)
–17
–15
C ol l e c t o r C u r r e nt I
C
( A )
( V
CE
=– 4 V )
–1A
–60
–15
0m
A
–4
Co l l e c t o r Cu r r en t I
C
( A)
A
00m
–200m
A
–2
–10
–100mA
–10
Tem
p)
Temp
)
(Case
25˚C
I
C
= –1 5A
–1 0A
–5A
0
0
–1
–2
–3
125˚
C (C
–5
–50mA
–5
I
B
=–20mA
0
0
–1
–2
–3
–4
0
0
–30˚C
–1
Ba s e - E m i t to r V ol t ag e V
BE
( V)
(Case
–1
ase
Temp
)
–2
C ol l e ct or - Em it t er Vo l t ag e V
C E
(V)
Bas e C ur r e nt I
B
( A)
h
FE
– I
C
Characteristics
(Typical)
( V
CE
= – 4 V )
300
DC C ur r e nt Ga i n h
F E
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= –4 V)
200
12 5˚ C
DC Cu r r en t G a i n h
FE
Transient Thermal Resistance
θ
j- a
( ˚ C / W )
2
θ
j - a
– t Characteristics
Typ
100
50
25 ˚ C
100
–3 0˚ C
1
0.5
50
10
–0.02
–0 . 1
– 0. 5
–1
–5
–10 –17
20
– 0 .0 2
–0 .1
– 0. 5
–1
–5
–1 0 – 1 7
0.1
1
10
1 00
T i m e t( m s )
1 0 00
2000
C ol l ec t or Cu rren t I
C
(A )
Co l le c to r Cu r r en t I
C
( A)
f
T
– I
E
Characteristics
(Typical)
( V
C E
= –1 2 V)
30
–50
Safe Operating Area
(Single Pulse)
200
20
m
3m
Pc – Ta Derating
M a xim u m P o we r D i s s i p at i o n P
C
( W )
s
s
10ms
C ut- off F r e q u e n c y f
T
( M H
Z
)
Typ
Co llec t o r C u r r e n t I
C
( A )
20
160
10
0m
–10
–5
W
D
ith
s
C
In
fin
120
ite
he
at
si
nk
10
–1
–0.5
Without Heatsink
Natural Cooling
80
40
Without Heatsink
0
25
50
75
10 0
125
150
0
0.02
– 0 .1
0. 1
1
Emi t t e r Curre nt I
E
(A)
10
–2
–1 0
–1 00
–3 00
Co l l ec to r - Em i tt er Vo l ta g e V
C E
( V)
5
0
Am b i e n t T e m p er a t u r e T a( ˚ C )
22