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2SA1186_07 参数 Datasheet PDF下载

2SA1186_07图片预览
型号: 2SA1186_07
PDF下载: 下载PDF文件 查看货源
内容描述: PNP硅外延平面晶体管 [Silicon PNP Epitaxial Planar Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 1 页 / 29 K
品牌: SANKEN [ SANKEN ELECTRIC ]
   
LAPT
2SA1186
Application :
Audio and General Purpose
(Ta=25°C)
Ratings
–100
max
–100
max
–150
min
50
min
–2.0
max
60
typ
110
typ
V
pF
20.0min
4.0max
Silicon PNP Epitaxial Planar Transistor
(Complement to type 2SC2837)
s
Absolute maximum ratings
(Ta=25°C)
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
Ratings
–150
–150
–5
–10
–2
100(Ta=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
s
Electrical Characteristics
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
Conditions
V
CB
=–150V
V
EB
=–5V
I
C
=–25mA
V
CE
=–4V, I
C
=–3A
I
C
=–5A, I
B
=–0.5A
V
CE
=–12V, I
E
=1A
V
CB
=–80V, f=1MHz
External Dimensions
MT-100(TO3P)
5.0
±0.2
15.6
±0.4
9.6
2.0
1.8
4.8
±0.2
2.0
±0.1
Unit
µ
A
µ
A
V
19.9
±0.3
4.0
a
b
ø3.2
±0.1
MHz
2
3
1.05
+0.2
-0.1
0.65
+0.2
-0.1
1.4
∗h
FE
Rank O(50 to 100), P(70 to 140), Y(90 to 180)
5.45
±0.1
B
C
E
s
Typical Switching Characteristics (Common Emitter)
V
CC
(V)
–60
R
L
(Ω)
12
I
C
(A)
–5
V
B2
(V)
5
I
B1
(mA)
–500
I
B2
(mA)
500
t
on
(
µ
s)
0.25typ
t
stg
(
µ
s)
0.8typ
t
f
(
µ
s)
0.2typ
5.45
±0.1
Weight : Approx 6.0g
a. Part No.
b. Lot No.
I
C
– V
CE
Characteristics
(Typical)
A
V
CE
( sat ) – I
B
Characteristics
(Typical)
C o l l e c t o r - Em i t t e r Sa t u r a ti o n V ol t ag e V
CE (sa t)
(V )
–3
I
C
– V
B E
Temperature Characteristics
(Typical)
–10
( V
C E
=– 4 V )
–10
0
20
00
m
–16
m
0mA
A
C o l l e c t o r C u r r e nt I
C
( A )
–8 0m A
–6
–2
C ol l e c t o r C ur r en t I
C
( A)
–8
mA
–120
A
–100m
–4
–8
–6
–60mA
–4
Tem
se
–1
˚C
125
0
0
–1
–2
–3
–4
0
0
– 0 .5
– 1. 0
– 1. 5
–2 . 0
0
0
–30
˚
–5 A
25˚
C(
–2
–2
–1
B a s e - E m i t t o r Vo l ta g e V
B E
( V)
C (C
I
B
=–20 mA
Ca
se
(Ca
ase
Tem
p)
–40mA
–4
p)
Tem
p)
I
C
= –1 0A
–2
Col l ec t or - Emi t t er Vo l ta ge V
C E
(V)
Bas e C ur r en t I
B
( A)
h
F E
– I
C
Characteristics
(Typical)
(V
C E
= – 4 V )
300
h
F E
– I
C
Temperature Characteristics
(Typical)
( V
C E
= – 4V)
200
1 25 ˚ C
D C C u r r e n t G ai n h
FE
Transient Thermal Resistance
θ
j- a
( ˚C /W )
3
θ
j - a
– t Characteristics
DC Cu r r en t G a i n h
FE
2 5˚ C
100
Typ
100
– 30 ˚ C
1
50
0 .5
50
20
–0.02
–0. 1
– 0. 5
–1
–5
–10
30
–0.02
–0 . 1
– 0. 5
–1
–5
– 10
0 .2
1
10
100
Time t(ms)
1 00 0 2 0 00
Co l l ect o r Curre nt I
C
(A)
C ol l e ct or C u r r e nt I
C
( A)
f
T
– I
E
Characteristics
(Typical)
(V
C E
= –1 2 V )
80
–30
Safe Operating Area
(Single Pulse)
10 0
M ax im um P ow e r D i s s i p a ti o n P
C
( W )
Pc – Ta Derating
Cu t-o ff F r e q u en c y f
T
( M H
Z
)
Co llec t o r Cu r r en t I
C
(A )
60
Ty
p
–10
10
ms
W
ith
In
–5
fin
D
C
ite
he
40
50
at
si
nk
–1
Without Heatsink
Natural Cooling
20
– 0 .5
0
0.02
0. 1
1
10
– 0 .2
–2
– 10
–1 0 0
– 2 00
3. 5
0
W i t h o ut H e a ts i n k
0
25
50
75
100
125
150
Emi t t e r Cu r ren t I
E
(A )
C ol l ec t or - Em i tt e r V ol t ag e V
C E
( V)
A m bi e nt T e m p e r a t ur e T a ( ˚ C )
11