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S5PV210AA0-LA40
3.2 MEMORY SUBSYSTEM
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High bandwidth Memory Matrix subsystem
Two independent external memory ports (1 x16 Static Hybrid Memory port and 2 x32 DRAM port)
Matrix architecture increases overall bandwidth with the simultaneous access capability
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SRAM/ROM/NOR Interface
∗ x8 or x16 data bus
∗ Address range support: 23-bit
∗ Supports asynchronous interface
∗ Supports byte and half-word access
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OneNAND Interface
∗ x16 data bus
∗ Address range support: 16-bit
∗ Supports byte and half-word access
∗ Supports 2KB page mode for OneNAND, 4KB page mode for Flex OneNAND
∗ Supports dedicated DMA
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NAND Interface
∗ Support industry standard NAND interface
∗ x8 data bus
LPDDR1 Interface
∗ x32 data bus with 400Mbps/pin double data rate (DDR)
∗ 1.8V interface voltage
∗ Density support up to 4-Gb per port (2CS)
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DDR2 Interface
∗ x32 data bus with 400Mbps/pin double data rate (DDR)
∗ 1.8V interface voltage
∗ Density support up to 1-Gb per port (2CS, when 4bank DDR2)
∗ Density support up to 4-Gb per port (1CS, when 8bank DDR2)
LPDDR2 interface
∗ x32 data bus with up to 400Mbps/pin
∗ 1.2V interface voltage
∗ Density support up to 4-Gb per port (2CS)
1.1-5