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S3C4510B 参数 Datasheet PDF下载

S3C4510B图片预览
型号: S3C4510B
PDF下载: 下载PDF文件 查看货源
内容描述: 三星S3C4510B的16位/ 32位RISC微控制器是一款高性价比,高性能的基于以太网的系统微控制器解决方案。 [Samsungs S3C4510B 16/32-bit RISC microcontroller is a cost-effective, high-performance microcontroller solution for Ethernet-based systems.]
分类和应用: 微控制器以太网
文件页数/大小: 422 页 / 2160 K
品牌: SAMSUNG [ SAMSUNG ]
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S3C4510B  
SYSTEM MANAGER  
ROM BANK 5 ADDRESS/DATA MULTIPLEXED BUS  
Overview  
The S3C4510B has separate address and data bus. S3C4510B supports multiplexed address/data bus for low  
cost chips which require multiplexed bus. To support this feature, the S3C4510B has one special bank (ROM  
bank 5) which can support address/data multiplexed bus and 4-data burst access by GDMA. For this feature, you  
should set the MUX enable bit and wait enable bit of CLKCON register.  
You can also use ROM bank 5 as normal ROM bank by clearing MUX enable bit of CLKCON register.  
When you set the wait enable bit in the CLKCON register, wait cycle can be added by nEWAIT pin for ROM bank  
5. Other ROM banks except ROM bank 5 has no effects. nEWAIT pin also can be used to add wait cycle for EXT  
I/O bank regardless of the wait enable bit.  
Random Access by CPU  
At the first cycle of ROM bank 5, address comes out from data bus. Therefore, any device which is connected to  
the ROM bank 5 can get address. The rest cycle is for data. As the S3C4510B has not a dedicated address  
strobe signal for address phase in the data burst, you should generate address strobe signal in the application  
device.  
Four-data Burst Access by GDMA  
When you set FB (4-data burst enable) bit in the GDMACON register, the GDMA requests 4-data burst access.  
When you access ROM bank 5 by 4-data burst mode, the multiplexed ROM bank 5 bus has only one address  
phase. Therefore, you should internally calculate the address at the data phase. To notify the 4-data burst mode  
to ROM bank 5 device, the ADDR[21] remains "1" during address phase.  
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