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KM684000BLP-7L 参数 Datasheet PDF下载

KM684000BLP-7L图片预览
型号: KM684000BLP-7L
PDF下载: 下载PDF文件 查看货源
内容描述: 512Kx8位低功耗CMOS静态RAM [512Kx8 bit Low Power CMOS Static RAM]
分类和应用: 存储内存集成电路静态存储器光电二极管
文件页数/大小: 9 页 / 173 K
品牌: SAMSUNG [ SAMSUNG ]
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CMOS SRAM  
KM684000B Family  
512Kx8 bit Low Power CMOS Static RAM  
FEATURES  
GENERAL DESCRIPTION  
· Process Technology: TFT  
The KM684000B families are fabricated by SAMSUNG¢s  
advanced CMOS process technology. The families support  
various operating temperature ranges and various package  
types for user flexibility of system design. The family also  
support low data retention voltage for battery back-up oper-  
ation with low data retention current.  
· Organization: 512Kx8  
· Power Supply Voltage: 4.5~5.5V  
· Low Data Retention Voltage: 2V(Min)  
· Three state output and TTL Compatible  
· Package Type: 32-DIP-600, 32-SOP-525  
32-TSOP2-400F/R  
PRODUCT FAMILY  
Power Dissipation  
Product Family  
Operating Temperature  
Vcc Range  
Speed  
PKG Type  
Standby  
(ISB1, Max)  
Operating  
(ICC2, Max)  
KM684000BL  
KM684000BL-L  
KM684000BLI  
KM684000BLI-L  
100mA  
20mA  
32-DIP,32-SOP  
32-TSOP2-F/R  
Commercial (0~70°C)  
Inderstrial (-40~85°C)  
551)/70ns  
4.5~5.5V  
80mA  
100mA  
50mA  
32-SOP  
32-TSOP2-F/R  
1. The parameter is measured with 50pF test load.  
PIN DESCRIPTION  
FUNCTIONAL BLOCK DIAGRAM  
A18  
A16  
A14  
A12  
A7  
VCC  
A15  
A17  
WE  
A13  
A8  
VCC  
A15  
A17  
1
Clk gen.  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
32  
31  
30  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
17  
1
A18  
Precharge circuit.  
2
2
3
A16  
A14  
A12  
A7  
3
A18  
A16  
A14  
A12  
A7  
4
WE  
A13  
A8  
4
5
5
Memory array  
1024 rows  
512´ 8 columns  
6
A6  
6
A6  
Row  
select  
32-DIP  
32-SOP  
32-TSOP2  
A5  
7
A9  
A9  
7
A5  
A6  
32-TSOP2  
(Reverse)  
A11  
OE  
A4  
8
A11  
OE  
8
A4  
A5  
A4  
A3  
9
9
A3  
(Forward)  
A1  
A10  
CS  
A2  
10  
11  
12  
13  
14  
15  
16  
A10  
CS  
10  
11  
12  
13  
14  
15  
16  
A2  
A0  
A1  
A1  
I/O8  
I/O7  
I/O6  
I/O5  
I/O4  
I/O8  
I/O7  
I/O6  
I/O5  
I/O4  
A0  
A0  
I/O1  
I/O8  
Data  
cont  
I/O Circuit  
I/O1  
I/O2  
I/O3  
VSS  
I/O1  
I/O2  
I/O3  
VSS  
Column select  
Data  
cont  
A9 A8 A13A17 A15 A10 A11 A3 A2  
Pin Name  
WE  
Function  
Write Enable Input  
Chip Select Input  
Output Enable Input  
Address Inputs  
Data Inputs/Outputs  
Power  
CS  
CS  
WE  
OE  
Control  
logic  
OE  
A0~A18  
I/O1~I/O8  
Vcc  
Vss  
Ground  
SAMSUNG ELECTRONICS CO., LTD. reserves the right to change products and specifications without notice.  
Revision 3.0  
September 1998  
2