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KM681000CLG-5L 参数 Datasheet PDF下载

KM681000CLG-5L图片预览
型号: KM681000CLG-5L
PDF下载: 下载PDF文件 查看货源
内容描述: 128K ×8位低功耗CMOS静态RAM [128K x8 bit Low Power CMOS Static RAM]
分类和应用:
文件页数/大小: 10 页 / 191 K
品牌: SAMSUNG [ SAMSUNG ]
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PRELIMINARY  
KM681000C Family  
CMOS SRAM  
TIMMING DIAGRAMS  
TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS1=OE=VIL, WE=VIH)  
tRC  
Address  
tAA  
tOH  
Data Valid  
Data Out  
Previous Data Valid  
TIMING WAVEFORM OF READ CYCLE(2) (WE=VIH)  
tRC  
Address  
tOH  
tAA  
tCO1  
CS1  
tHZ(1,2)  
CS2  
tCO2  
tOE  
OE  
tOLZ  
tLZ  
tOHZ  
High-Z  
Data out  
Data Valid  
NOTES (READ CYCLE)  
1. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit conditions and are not referenced to output voltage  
levels.  
2. At any given temperature and voltage condition, tHZ(Max.) is less than tLZ(Min.) both for a given device and from device to device  
interconnection.  
Revision 2.0  
November 1997  
6