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KFG1216U2B-SIB6 参数 Datasheet PDF下载

KFG1216U2B-SIB6图片预览
型号: KFG1216U2B-SIB6
PDF下载: 下载PDF文件 查看货源
内容描述: [Flash, 32MX16, 70ns, PBGA67]
分类和应用: 内存集成电路
文件页数/大小: 120 页 / 1551 K
品牌: SAMSUNG [ SAMSUNG ]
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OneNAND512Mb(KFG1216U2B-xIB6)  
FLASH MEMORY  
Write Interrupt (WI)  
This is the Write interrupt bit.  
WI Interrupt [6]  
Default State  
Valid  
State  
Interrupt  
Function  
Status  
Conditions  
Cold  
Warm/hot  
0
0
0
off  
At the completion of an Program Operation  
(0080h, 001Ah, 001Bh)  
sets itself to ’1’  
clears to ’0’  
Pending  
01  
’0’ is written to this bit,  
Cold/Warm/Hot reset is being performed, or  
command is written to Command Register in  
INT auto mode  
off  
10  
Erase Interrupt (EI)  
This is the Erase interrupt bit.  
EI Interrupt [5]  
Status  
Default State  
Valid  
State  
Interrupt  
Function  
Conditions  
Cold  
Warm/hot  
0
0
0
off  
At the completion of an Erase Operation  
(0094h, 0095h, 0030h)  
sets itself to ’1’  
clears to ’0’  
Pending  
01  
’0’ is written to this bit,  
Cold/Warm/Hot reset is being performed, or  
command is written to Command Register in  
INT auto mode  
off  
10  
Reset Interrupt (RSTI)  
This is the Reset interrupt bit.  
RSTI Interrupt [4]  
Status  
Default State  
Valid  
State  
Interrupt  
Function  
Conditions  
Cold  
Warm/hot  
0
1
0
off  
At the completion of an Reset Operation  
(00B0h, 00F0h, 00F3h or  
sets itself to ’1’  
clears to ’0’  
01  
Pending  
warm reset is released)  
’0’ is written to this bit, or  
command is written to Command Register in  
INT auto mode  
off  
10  
49  
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