K9F5608U0B-VCB0,VIB0,FCB0,FIB0
K9F5608Q0B-DCB0,DIB0,HCB0,HIB0
K9F5608U0B-YCB0,YIB0,PCB0,PIB0
K9F5608U0B-DCB0,DIB0,HCB0,HIB0
K9F5616Q0B-DCB0,DIB0,HCB0,HIB0
K9F5616U0B-YCB0,YIB0,PCB0,PIB0
K9F5616U0B-DCB0,DIB0,HCB0,HIB0
FLASH MEMORY
* Status Read Cycle
tCLR
CLE
tCLS
tCLH
tCS
CE
tCH
tWP
WE
tCEA
tCHZ
tOH
tWHR
RE
tRHZ
tOH
tDH
tREA
tDS
tIR
Status Output
I/Ox
70h
READ1 OPERATION(READ ONE PAGE)
CLE
1)
tCEH
On K9F5608U0B_Y,P or K9F5608U0B_V,F
CE must be held
low during tR
CE
tCHZ
tOH
tWC
WE
tWB
tCRY
tAR
ALE
RE
tRHZ
tOH
tR
tRC
N Address
tRR
Read
CMD
A17~A24
A0~A7 A9~A16
Dout N+1 Dout N+2 Dout N+3
Dout m
tRB
Dout N
I/Ox
Column
Address
Page(Row)
Address
Busy
R/B
1)
X8 device : m = 528 , Read CMD = 00h or 01h
X16 device : m = 264 , Read CMD = 00h
NOTES : 1) is only valid on K9F5608U0B_Y,P or K9F5608U0B_V,F
22
SAMSUNG [ SAMSUNG ]
