K9F5608Q0C
K9F5608D0C
K9F5608U0C
K9F5616Q0C
K9F5616D0C
K9F5616U0C
FLASH MEMORY
2) Unlock
- Command Sequence: Unlock block Command(23h) + Start block address + Command(24h) + End block address
- Unlocked blocks can be programmed or erased.
- An unlocked block’s status can be changed to the locked or lock-tighten state using the appropriate commands.
- Only one consecutive area can be released to unlock state from lock state; Unlocking multi area is not available.
- Start block address must be nearer to the logical LSB(Least Significant Bit) than End blcok address.
- One block is selected for unlocking block when Start block address is same as End block address.
WP
CLE
CE
WE
ALE
I/Ox
23h
Add.1
Add.2
24h
Add.1
Add.2
End Block Address 2 cycles
Unlock Command
Unock Command
Start Block Address 2cycles
3) Lock-tight
- Command Sequence: Lock-tight block Command(2Ch)
- Lock-tighten blocks offer the user an additional level of write protection beyond that of a regular lock block. A block that is lock-
tighten can’t have it’s state changed by software control, only by hardware control(WP low pulse input); Unlocking multi area is not
available
- Only locked blocks can be lock-tighten by lock-tight command.
WP
CLE
CE
WE
I/Ox
2Ch
Lock-tight Command
36
SAMSUNG [ SAMSUNG ]
