K9F1208D0A K9F1216D0A
K9F1208U0A K9F1216U0A
FLASH MEMORY
@ Vcc = 2.65V, Ta = 25°C , CL = 30pF
300n
3m
2.3
Ibusy
200n
100n
1.1
2m
1m
120
90
tr
60
30
0.75
2.3
2.3
2.3
1K
0.55
tf
2.3
4K
2K
3K
Rp(ohm)
@ Vcc = 3.3V, Ta = 25°C , CL = 100pF
400
2.4
Ibusy
300n
3m
300
1.2
200n
100n
200
0.8
2m
1m
tr
100
3.6
0.6
3.6
3.6
2K
3.6
tf
4K
1K
3K
Rp(ohm)
Rp value guidance
VCC(Max.) - VOL(Max.)
2.5V
Rp(min, 2.65V part) =
Rp(min, 3.3V part) =
=
=
IOL + SIL
3mA + SIL
VCC(Max.) - VOL(Max.)
3.2V
IOL + SIL
8mA + SIL
where IL is the sum of the input currents of all devices tied to the R/B pin.
Rp(max) is determined by maximum permissible limit of tr
45
SAMSUNG [ SAMSUNG ]
