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K9F1216U0A-Y 参数 Datasheet PDF下载

K9F1216U0A-Y图片预览
型号: K9F1216U0A-Y
PDF下载: 下载PDF文件 查看货源
内容描述: 64M ×8位, 32M x 16位NAND闪存 [64M x 8 Bit , 32M x 16 Bit NAND Flash Memory]
分类和应用: 闪存
文件页数/大小: 46 页 / 742 K
品牌: SAMSUNG [ SAMSUNG ]
 浏览型号K9F1216U0A-Y的Datasheet PDF文件第17页浏览型号K9F1216U0A-Y的Datasheet PDF文件第18页浏览型号K9F1216U0A-Y的Datasheet PDF文件第19页浏览型号K9F1216U0A-Y的Datasheet PDF文件第20页浏览型号K9F1216U0A-Y的Datasheet PDF文件第22页浏览型号K9F1216U0A-Y的Datasheet PDF文件第23页浏览型号K9F1216U0A-Y的Datasheet PDF文件第24页浏览型号K9F1216U0A-Y的Datasheet PDF文件第25页  
K9F1208D0A K9F1216D0A  
K9F1208U0A K9F1216U0A  
FLASH MEMORY  
System Interface Using CE don’t-care.  
For an easier system interface, CE may be inactive during the data-loading or sequential data-reading as shown below. The internal  
528byte 1264word page registers are utilized as separate buffers for this operation and the system design gets more flexible. In addi-  
tion, for voice or audio applications which use slow cycle time on the order of u-seconds, de-activating CE during the data-loading and  
reading would provide significant savings in power consumption.  
Figure 7. Program Operation with CE don’t-care.  
CLE  
CE don’t-care  
CE  
WE  
ALE  
80h  
Start Add.(4Cycle)  
Data Input  
Data Input  
10h  
I/OX  
tCS  
tCH  
tCEA  
CE  
CE  
tREA  
RE  
tWP  
WE  
I/OX  
out  
Figure 8. Read Operation with CE don’t-care.  
On K9F1208U0A-Y,P,V,F or K9F1208D0A-Y,P  
CE must be held  
low during tR  
CLE  
CE  
CE don’t-care  
RE  
ALE  
tR  
R/B  
WE  
Data Output(sequential)  
I/OX  
00h  
Start Add.(4Cycle)  
21  
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