Preliminary
K5A3x80YT(B)C
MCP MEMORY
NOTES: 1. RA : Read Address, PA : Program Address, RD : Read Data, PD : Program Data
DA : Dual Bank Address (A19 - A20), BA : Block Address (A12 - A20), X = Don’t care .
2. To terminate the Autoselect Mode, it is necessary to write Reset command to the register.
3. The 4th cycle data of Autoselect mode is output data.
The 3rd and 4th cycle bank addresses of Autoselect mode must be same.
4. The Read / Program operations at non-erasing blocks and the autoselect mode are allowed in the Erase Suspend mode.
5. The Erase Suspend command is applicable only to the Block Erase operation.
6. DQ8 - DQ15 are don’t care in command sequence, except for RD and PD.
7. A11 - A20 are also don’t care, except for the case of special notice.
Table 6. Flash Memory Autoselect Codes
DQ8 to DQ15
Description
DQ7 to DQ0
BYTEF = VIH
BYTEF = VIL
Manufacturer ID
X
X
X
ECH
A0H
Device Code K5A3280YT (Top Boot Block)
Device Code K5A3280YB (Bottom Boot Block)
Device Code K5A3380YT (Top Boot Block)
Device Code K5A3380YB (Bottom Boot Block)
Block Protection Verification
22H
22H
22H
22H
X
X
X
A2H
A1H
A3H
01H (Protected),
00H (Unprotected)
X
X
X
X
80H (Factory locked),
00H (Not factory locked)
Secode Block Indicator Bit (DQ7)
Table 7. Flash Memory Operation Table
WP/
ACC
DQ15/
A-1
DQ8/
DQ14
DQ0/
DQ7
CEF
BYTEF
Operation
OE
WE
A9
A6
A1
A0
RESET
word
byte
L
L
L
L
H
H
H
L
A9
A9
A6
A6
A1
A1
A0
A0
DQ15
A-1
DOUT
DOUT
DOUT
H
H
Read
L/H
(2)
High-Z
VccF
0.3V
±
Stand-by
X
X
X
X
X
X
X
High-Z
High-Z
High-Z
(2)
Output Disable
Reset
L
X
L
L
H
X
H
H
H
X
L
X
X
H
L
L/H
L/H
X
X
X
X
X
X
X
X
High-Z
High-Z
DIN
High-Z
High-Z
DIN
High-Z
High-Z
DIN
H
L
word
byte
A9
A9
A6
A6
A1
A1
A0
A0
H
H
Write
(4)
L
A-1
High-Z
DIN
Enable Block Group
Protect (3)
L
L
X
H
H
X
L
L
X
X
X
L/H
(4)
X
X
X
L
H
X
H
H
X
L
L
X
X
X
X
X
X
DIN
DIN
X
VID
VID
VID
Enable Block Group
Unprotect (3)
Temporary Block
Group
X
(4)
X
NOTES:
1. L = VIL (Low), H = VIH (High), VID = 8.5V~12.5V, DIN = Data in, DOUT = Data out, X = Don't care.
2. WP/ACC and RESET ball are asserted at VccF±0.3 V or Vss±0.3 V in the Stand-by mode.
3. Addresses must be composed of the Block address (A12 - A20).
The Block Protect and Unprotect operations may be implemented via programming equipment too.
Refer to the "Block Group Protection and Unprotection".
4. If WP/ACC=VIL, the two outermost boot blocks is protected. If WP/ACC=VIH, the two outermost boot block protection depends on whether those
blocks were last protected or unprotected using the method described in "Block Group Protection and Unprotection". If WP/ACC=VHH, all blocks
will be temporarily unprotected.
Revision 0.0
November 2002
- 9 -
SAMSUNG [ SAMSUNG ]
