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K4B2G0846D-HYH9 参数 Datasheet PDF下载

K4B2G0846D-HYH9图片预览
型号: K4B2G0846D-HYH9
PDF下载: 下载PDF文件 查看货源
内容描述: 2GB D-死DDR3L SDRAM [2Gb D-die DDR3L SDRAM]
分类和应用: 动态存储器双倍数据速率
文件页数/大小: 64 页 / 1744 K
品牌: SAMSUNG [ SAMSUNG ]
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Rev. 1.01  
K4B2G0446D  
K4B2G0846D  
datasheet  
DDR3L SDRAM  
9.6 Overshoot/Undershoot Specification  
9.6.1 Address and Control Overshoot and Undershoot specifications  
[ Table 22 ] AC overshoot/undershoot specification for Address and Control pins (A0-A12, BA0-BA2. CS. RAS. CAS. WE. CKE, ODT)  
Specification  
Parameter  
Unit  
DDR3-800  
1.35V  
DDR3-1066  
DDR3-1333  
DDR3-1600  
Maximum peak amplitude allowed for overshoot area (See Figure 9)  
Maximum peak amplitude allowed for undershoot area (See Figure 9)  
Maximum overshoot area above VDD (See Figure 9)  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
TBD  
V
V
V-ns  
Maximum undershoot area below VSS (See Figure 9)  
TBD  
TBD  
TBD  
TBD  
V-ns  
1.5V  
Maximum peak amplitude allowed for overshoot area (See Figure 9)  
Maximum peak amplitude allowed for undershoot area (See Figure 9)  
Maximum overshoot area above VDD (See Figure 9)  
0.4V  
0.4V  
0.4V  
0.4V  
0.4V  
0.4V  
0.4V  
0.4V  
V
V
0.67V-ns  
0.5V-ns  
0.4V-ns  
0.33V-ns  
V-ns  
Maximum undershoot area below VSS (See Figure 9)  
0.67V-ns  
0.5V-ns  
0.4V-ns  
0.33V-ns  
V-ns  
Maximum Amplitude  
Overshoot Area  
VDD  
VSS  
Volts  
(V)  
Undershoot Area  
Maximum Amplitude  
Time (ns)  
Figure 9. Address and Control Overshoot and Undershoot Definition  
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