S T U/D6025NL
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is = 20A
Min Typ Max Unit
0.86
1.3
V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
a
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
50
V
G S
=4V
V
G S
=8V
V
G S
=10V
20
40
I
D
, Drain C urrent(A)
30
V
G S
=3.5V
I
D
, Drain C urrent (A)
V
G S
=4.5V
15
10
25 C
5
-55 C
0
T j=125 C
4.2
20
10
0
V
G S
=3V
0
0.5
1
1.5
2
2.5
3
0
0.7
1.4
2.1
2.8
3.5
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
5400
1.8
F igure 2. Trans fer C haracteris tics
R
DS (ON)
, On-R es is tance
Normalized
4500
1.6
1.4
1.2
1.0
0.8
0.6
-55
V
G S
=10V
I
D
=14A
C , C apacitance (pF )
3600
2700
1800
900
C rs s
0
0
5
10
C os s
C is s
15
20
25
30
-25
0
25
50
75
100 125
T j( C )
V
DS
, Drain-to S ource Voltage (V )
T j, J unction T emperature ( C )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
