STU/D6025NL2
Ver 2.0
120
VGS=10V
VGS=4V
60
I
D
, Drain Current(A)
I
D
, Drain Current(A)
96
VGS=3.5V
48
72
36
Tj=125 C
24
25 C
48
VGS=3V
24
VGS=2.5V
12
-55 C
0
0
0
0.5
1
1.5
2
2.5
3
0.7
1.4
2.1
2.8
3.5
4.2
V
DS
, Drain-to-Source Voltage(V)
V
GS
, Gate-to-Source Voltage(V)
Figure 1. Output Characteristics
12
15
V
G S
=4.5V
8
6
4
2
0
V
G S
=10V
Figure 2. Transfer Characteristics
1.8
R
DS(on)
, On-Resistance
Normalized
1.6
V
G S
=10V
I
D
= 25A
R
DS(on)
(m
Ω
)
1.4
1.2
V
G S
=4.5V
I
D
=20 A
1.0
0.8
1
24
48
72
96
120
0
25
50
75
100
125
I
D
, Drain Current(A)
Tj, Junction Temperature(° C )
150
T j (
°C )
Figure 3. On-Resistance vs. Drain Current
and Gate Voltage
Figure 4. On-Resistance Variation with Drain
Current and Temperature
BVDSS, Normalized
Drain-Source Breakdown Voltage
1.6
Vth, Normalized
Gate-Source Threshold Voltage
1.20
I
D
=250uA
1.15
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50
75
100 125 150
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50
-25
0
25
50
75
V
DS
=V
G S
I
D
=250uA
100 125 150
Tj, Junction Temperature(° C )
Tj, Junction Temperature(° C )
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Breakdown Voltage Variation
with Temperature
Oct,15,2010
3
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
