STU/D432S
SamHop Microelectronics Corp.
Nov,19,2007 ver1.4
N-Channel Logic Level Enhancement Mode Field Effect Transistor
4
PRODUCT SUMMARY
V
DSS
40V
FEATURES
( m
W
) Max
I
D
50A
R
DS(ON)
Super high dense cell design for low R
DS(ON
).
Rugged and reliable.
TO-252 and TO-251 Package.
D
9 @ V
GS
= 10V
D
G
S
G
D
S
G
STU SERIES
TO-252AA(D-PAK)
STD SERIES
TO-251(l-PAK)
S
ABSOLUTE MAXIMUM RATINGS (TC=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous @Ta
-Pulsed
a
Drain-Source Diode Forward Current
Avalanche Current
Avalanche Energy
c
a
Symbol
V
DS
V
GS
a
Limit
40
20
50
100
20
23
130
50
-55 to 175
Unit
V
V
A
A
A
A
mJ
W
C
25 C
I
D
I
DM
I
S
I
AS
E
AS
P
D
T
J
, T
STG
b
c
Maximum Power Dissipation
Ta= 25 C
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
R
JC
R
JA
3
50
C /W
C /W
1
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
