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STU421S 参数 Datasheet PDF下载

STU421S图片预览
型号: STU421S
PDF下载: 下载PDF文件 查看货源
内容描述: P -Channel逻辑E级nhancement模式F屈服ê ffect晶体管 [P -Channel Logic Level E nhancement Mode F ield E ffect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 8 页 / 498 K
品牌: SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
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S T U/D421S
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is = -10A
Min Typ Max Unit
-0.91 -1.3
V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
a
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
30
V
G S
=-10V
V
G S
=-8V
20
V
G S
=-4.5V
16
-55 C
-I
D
, Drain C urrent(A)
24
18
I
D
, Drain C urrent (A)
V
G S
=-3.5V
12
25 C
8
12
V
G S
=-3V
6
0
4
0
T j=125 C
0
0.6
1.8
2.4
3.2
4.0
4.8
0
0.5
1
1.5
2
2.5
3
-V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
120
1.5
F igure 2. Trans fer C haracteris tics
R
DS (ON)
, On-R es is tance
Normalized
100
1.4
1.3
1.2
1.1
1.0
0.0
V
G S
=-4.5V
I
D
=-6A
R
DS (on)
(m
W
)
80
V
G S
=-4.5V
60
40
20
1
V
G S
=-10V
V
G S
=-10V
I
D
=-10A
1
6
12
18
24
30
0
25
50
75
100
125
150
T j( C )
I
D
, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3