S amHop Microelectronics C orp.
S T U402D
MAY .03 2006
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V
DS S
40V
F E AT UR E S
( m
W
) Max
I
D
16A
R
DS (ON)
S uper high dense cell design for low R
DS (ON
).
30 @ V
G S
= 10V
40 @ V
G S
=4.5V
R ugged and reliable.
TO252-4L package.
D1
D2
D1/D2
S1
G1
S2
TO-252-4L
G2
G1
S1
N-ch
G2
S2
N-ch
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ Ta
-P ulsed
a
S ymbol
V
DS
V
GS
25 C
70 C
I
D
I
DM
I
S
Ta= 25 C
Ta=70 C
P
D
T
J
, T
S TG
Limit
40
20
16
13.8
50
8
11
7.7
-55 to 175
Unit
V
V
A
A
A
A
W
C
Drain-S ource Diode Forward C urrent
Maximum P ower Dissipation
Operating Junction and S torage
Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-C ase
Thermal R esistance, Junction-to-Ambient
1
R
JC
R
JA
13.6
120
C /W
C /W
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
