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STU3525NLS 参数 Datasheet PDF下载

STU3525NLS图片预览
型号: STU3525NLS
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道逻辑E级nhancement模式场效应晶体管 [N-Channel Logic Level E nhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 9 页 / 850 K
品牌: SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
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S T U/D3525NLS
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is = 10A
Min Typ Max Unit
0.97
1.3
V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
a
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
c.Garanted when extemal R g=6 0hm and tf < tfmax
50
V
G S
=5V
V
G S
=10V
V
G S
=8V
20
V
G S
=4.5V
15
T j=125 C
10
-55 C
40
I
D
, Drain C urrent(A)
30
V
G S
=4V
20
10
V
G S
=3V
0
0
0.5
1
1.5
2
2.5
3
I
D
, Drain C urrent (A)
5
25 C
0
0
0.7
1.4
2.1
2.8
3.5
4.2
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
30
1.6
F igure 2. Trans fer C haracteris tics
R
DS (ON)
, On-R es is tance
Normalized
25
1.4
1.2
1.0
0.8
0.6
0.4
-55
V
G S
=10V
I
D
=20A
R
DS (on)
(m
W
)
V
G S
=4.5V
20
15
10
5
0
V
G S
=10V
V
G S
=4.5V
I
D
=10A
0
10
20
30
40
50
-25
0
25
50
75
100 125
T j( C )
I
D
, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
F igure 4. On-R es is tance vs J unction
Temperature
3