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STU2555NL 参数 Datasheet PDF下载

STU2555NL图片预览
型号: STU2555NL
PDF下载: 下载PDF文件 查看货源
内容描述: N沟道é nhancement模式场效应晶体管 [N-Channel E nhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 8 页 / 867 K
品牌: SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
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S T U/D2555NL
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
Parameter
S ymbol
Condition
Min Typ Max Unit
0.9
1.2
V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
a
Diode Forward Voltage
V
GS
= 0V, Is = 15A
V
SD
Notes
a.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
b.Guaranteed by design, not subject to production testing.
c.Guaranteed by design, not subject to production testing.
d.Guaranteed when external R g=6 ohm and tf < tf max
20
V
G S
=5V
16
V
G S
=4.5V
20
15
T j=125 C
10
25 C
5
-55 C
I
D
, Drain C urrent(A)
12
V
G S
=10V
8
4
0
V
G S
=4V
V
G S
=3V
I
D
, Drain C urrent (A)
0
0
0.5
1
1.5
2
2.5
3
0
1
2
3
4
5
6
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
1500
1.6
F igure 2. Trans fer C haracteris tics
R
DS (ON)
, On-R es is tance
Normalized
1250
1.4
1.2
1.0
0.8
0.6
0.4
-55
V
G S
=10V
I
D
=8A
C , C apacitance (pF )
1000
C is s
750
500
250
C os s
0
C rs s
0
5
10
15
20
25
30
-25
0
25
50
75
100 125
T j( C )
V
DS
, Drain-to S ource Voltage (V )
T j, J unction T emperature ( C )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3