STU/D20N03L
ELECTRICAL CHARACTERISTICS (T
C
=25 C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
DSS
I
DSS
I
GSS
a
Symbol
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= 24V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS
= 10V, I
D
=20A
V
GS
= 4.5V, I
D
= 10A
V
DS
= 10V, V
GS
= 10V
V
DS
= 10V, I
D
= 20A
Min Typ Max Unit
30
1
100
1
1.5
17
30
50
8
614
83
61
2.5
V
uA
nA
V
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
R
DS(ON)
I
D(ON)
g
FS
b
Drain-Source On-State Resistance
On-State Drain Current
Forward Transconductance
23
m ohm
39
m ohm
A
S
P
F
P
F
P
F
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
C
ISS
C
OSS
C
RSS
b
V
Ds
=25V, V
GS
= 0V
f = 1.0MH
Z
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
t
D(ON)
t
t
D(OFF)
t
Q
g
Q
gs
Q
gd
2
V
DD
= 15V
I
D
=1A
V
GS
= 10V
R
L
= 15 ohmR
GEN
= 11
ohm
V
DD
= 15V,I
D
= 1A,V
GS
=10V
V
DS
= 15V,I
D
= 1A,V
GS
=4.5V
V
DD
= 15V, I
D
= 1A
RL=15 ohm
15.2
4.5
23.3
12.7
17.8
8.8
2.8
3
ns
ns
ns
ns
nC
nC
nC
nC
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
