S T U/D2030P LS
E LE CTR ICAL CHAR ACTE R IS TICS (T
C
=25 C unless otherwise noted)
Parameter
5
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
b
Condition
V
GS
= 0V, I
D
= -250uA
V
DS
= -20V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250uA
V
GS
= -10V, I
D
= -20A
V
GS
=-4.5V, I
D
= -10A
V
DS
= -10V, V
GS
= -10V
V
DS
= -10V, I
D
= -10A
Min Typ
C
Max Unit
-25
-1
V
uA
100 nA
-1
-1.7
27
41
-30
14
950
250
170
2.6
10
22
68.8
38.5
18.5
9.6
1.6
5.8
-3
32
55
V
m ohm
m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHAR ACTE R IS TICS
a
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
Gate resistance
C
IS S
C
OS S
C
RSS
Rg
b
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
V
DD
= -15V
I
D
= -1 A
V
GS
= -10V
R
GE N
= 6 ohm
V
DS
=-15V, I
D
= -20A
V
GS
=-10V
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
ns
ns
ns
ns
nC
nC
nC
nC
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
