S T U/D1030P L
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
5
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
C
IS S
C
OS S
C
RSS
c
Condition
V
GS
= 0V, I
D
= -250uA
V
DS
= -24V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250uA
V
GS
= -10V, I
D
=-5.3A
V
GS
= -4.5V, I
D
= -4.2A
V
DS
= -5V, V
GS
= -10V
V
DS
= -15V, I
D
= - 5.3A
Min Typ
C
Max Unit
-30
-1
100
-1
-1.8 -2.5
45
70
-15
7
612
129
96
55
V
uA
nA
V
m-ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
85
m-ohm
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
c
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
2
V
D
= -15V
I
D
= -1A
V
GE N
= - 10V
R
GE N
= 6 ohm
R
L
= 15 ohm
V
DS
=-15V,I
D
=-5.3A,V
GS
=-10V
V
DS
=-15V,I
D
=-5.3A,V
GS
=-4.5V
V
DS
=-15V, I
D
= -5.3A
V
GS
=-10V
12.6
17.4
45.4
37
13
6.8
2.7
2.6
ns
ns
ns
ns
nC
nC
nC
nC
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
