STS3414
Ver 1.1
120
100
80
20
Is, Source-drain current(A)
I
D
=4A
10
R
DS(on)
(m
Ω
)
125 C
60
40
75 C
20
0
25 C
25 C
125 C
75 C
0
2
4
6
8
10
1
0.3
0.6
0.9
1.2
1.5
1.8
V
GS
, Gate-to-Source Voltage(V)
V
SD
, Body Diode Forward Voltage(V)
Figure 7. On-Resistance vs.
Gate-Source Voltage
Figure 8. Body Diode Forward Voltage
Variation with Source Current
10
8
6
4
2
0
C is s
V
GS
, Gate to Source Voltage(V)
500
C, Capacitance(pF)
400
V
DS
=15V
I
D
=4A
300
200
100
C rs s
0
0
5
10
C os s
15
20
25
30
0
2
4
6
8
10
12
14
16
V
DS
, Drain-to-Source Voltage(V)
Qg, Total Gate Charge(nC)
Figure 9. Capacitance
Figure 10. Gate Charge
50
100
I
D
, Drain Current(A)
10
R
D
S
Switching Time(ns)
TD(off )
(O
L
N)
im
it
10
10
1 0
ms
0m
s
DC
1m
0u
s
s
1
10
Tf
TD(on)
Tr
0.1
V DS =5V ,ID=1A
V G S = 10V
V
G S
=10V
S ingle P ulse
T
A
=25 C
1
10
30
100
1
6
10
100
0.1
Rg, Gate Resistance(
Ω
)
V
DS
, Drain-Source Voltage(V)
Figure 11. switching characteristics
Figure 12. Maximum Safe Operating Area
Jan,16,2009
4
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SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
