S T S 3401
1.3
1.10
1.07
1.04
V
DS =V G S
ID=-250uA
1.2
ID=-250uA
1.1
1.0
0.9
1.00
0.97
0.8
0.7
0.6
0.94
0.91
-50 -25
0
25 50
75 100 125
-50 -25
0
25 50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
with T emperature
12
20
10
10
8
6
4
2
0
2
T
J
=25 C
1.6
V
DS =-5V
20
0
0
0.4
0.8
1.2
2.0
0
5
10
15
25
-IDS , Drain-S ource C urrent (A)
-V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
50
10
V
DS =-15V
=-3A
8
6
4
t
i
I
D
10
1
1
m
i
0
L
m
)
s
N
O
1
0
(
R DS
0
m
s
1
s
1
D
C
V
G S =-10V
2
0
0.1
S ingle P ulse
T c=25 C
0.03
0.1
1
10
30 50
0
2
4
6
8
10 12 16 20
Qg, T otal G ate C harge (nC )
-V DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
