S T S 2622
S amHop Microelectronics C orp.
F eb,25 2005 V er1.1
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V
DS S
20V
F E AT UR E S
( m
W
) Max
I
D
2.5A
R
DS (ON)
S uper high dense cell design for low R
DS (ON
).
80 @ V
G S
= 4.5V
110 @ V
G S
= 2.5V
R ugged and reliable.
TS OP 6 package.
D1
D2
TS OP 6
Top View
G1
S1
G2
1
2
3
6
5
4
D1
S2
D2
G1
S1
G2
S2
AB S OL UTE MAXIMUM R ATING (T
A
=25 C unles s otherwis e noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous
a
@ T
c
=25 C
b
-P ulsed
Drain-S ource Diode Forward C urrent
a
Maximum P ower Dissipation
a
Operating Junction and S torage
Temperature R ange
S ymbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
S TG
Limit
20
10
2.5
8
1.25
1
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient
a
R
thJA
125
C /W
1
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
