S amHop Microelectronics C orp.
S T S 2306
Apr,21 2005 ver1.2
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V
DS S
20V
F E AT UR E S
( m
Ω
) Max
I
D
2.8A
R
DS (ON)
S uper high dense cell design for low R
DS (ON
).
45 @ V
G S
= 4.5V
60 @ V
G S
=2.5V
R ugged and reliable.
S OT-23 package.
D
S OT-23
D
S
G
G
S
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous
a
@ T
J
=125 C
b
-P ulsed
Drain-S ource Diode Forward C urrent
a
Maximum P ower Dissipation
a
Operating Junction and S torage
Temperature R ange
S ymbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
S TG
Limit
20
8
2.8
12
1.25
1.25
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient
a
R
thJA
100
C /W
1
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
