S TS 2302S
E LE C T R IC AL C HAR AC T E R IS T IC S (T =25 C unless otherwise noted)
A
Typ Max
P arameter
C ondition
Min
Unit
V
S ymbol
b
DR AIN-S OUR C E DIODE C HAR AC T E R IS T IC S
Diode F orward Voltage
0.87
V
S D
V
G S = 0V, Is = 1.25A
1.2
Notes
a.S urface mounted on FR -4 board, t
10 sec
b.P ulse Test:P ulse Width 300us, Duty C ycle 2%.
c.G uaranteed by design, not subject to production testing.
12.5
15
12
VG S =2.5V
25 C
-55 C
V
G S =4.5V
10
V
G S =10V
Tj=125 C
7.5
9
6
VG S =2V
5.0
2.5
3
0
V
G S =1.5V
1.5
0
0
0.5
1.0
1.5
2.0
2.5
3.0
0
0.5
1
2
3
2.5
VDS , Drain-to-S ource Voltage (V)
VG S , G ate-to-S ource Voltage (V)
Figure 1. Output C haracteristics
Figure 2. Transfer C haracteristics
70
1.6
1.4
1.2
1.0
0.8
0.6
0.4
V
G S =4.5V
=4A
60
50
I
D
V
G S =2.5V
VG S =2.5V
ID=2A
40
30
V
VG S =4.5
20
0
0
-55
-25
50
75
2.5
5.0
7.5
10
12.5
125
100
0
25
Tj( C )
ID, Drain C urrent (A)
T j, J unction T emperature ( C )
Figure 3. On-R esistance vs. Drain C urrent
and G ate Voltage
Figure 4. On-R esistance Variation with
Drain C urrent and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
