S T S 2301
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =-1.25A
Min Typ Max Unit
-0.795 -1.2
V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
10
-V
G S
=10.5~2.5V
25
25 C
-55 C
-I
D
, Drain C urrent(A)
-I
D
, Drain C urrent (A)
8
20
6
15
T j=125 C
4
2
0
-V
G S
=1.5V
10
5
0
0.0
0
1
2
3
4
5
6
0.5
1
1.5
2
2.5
3
-V
DS
, Drain-to-S ource Voltage (V )
-V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
R
DS (ON)
, On-R es is tance(Ohms )
2.2
1.8
1.4
1.0
0.6
0.2
0
F igure 2. Trans fer C haracteris tics
V
G S
=-4.5V
I
D
=-4A
1500
C , C apacitance (pF )
1200
900
600
300
C os s
0
0
5
10
15
20
25
C rs s
30
C is s
-50
-25
0
25
50
75
100 125
T j( C )
-V
DS
, Drain-to S ource Voltage (V )
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
