S T M8455
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
V
SD
Condition
V
GS
= 0V, Is =1.7A
V
GS
= 0V, Is =-1.7A
N-Ch
P-Ch
Min Typ Max Unit
0.8
-0.77
1.3
-1.3
C
DRAIN-SOURCE DIODE CHARACTERISTICS
b
V
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
N-Channel
15
V
G S
=4.5V
15
12
I
D
, Drain C urrent(A)
V
G S
=8V
V
G S
=10V
12
9
I
D
, Drain C urrent (A)
V
G S
=3.5V
9
6
T j=125 C
3
0
-55 C
25 C
0
0.8
1.6
2.4
3.2
4.0
4.8
6
3
V
G S
=3V
0
0.5
1
1.5
2
2.5
3
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
45
2.0
F igure 2. Trans fer C haracteris tics
R
DS (ON)
, On-R es is tance
Normalized
40
1.8
1.6
1.4
1.2
1.0
0
V
G S
=4.5V
I
D
=4A
V
G S
=10V
I
D
=5A
R
DS (on)
(m
W
)
35
30
25
V
G S
=4.5V
V
G S
=10V
20
1
1
3
6
9
12
15
0
25
50
75
100
125
150
T j( C )
I
D
, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
4
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
