S T M8403
P-Channel ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
c
S ymbol
Condition
V
GS
= 0V, I
D
= -250uA
V
DS
= -24V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250uA
V
GS
=-10V, I
D
= -4.5A
V
GS
=-4.5V, I
D
= -3.6A
V
DS
= -5V, V
GS
= -10V
V
DS
= - 15V, I
D
= - 4.5A
Min Typ
C
Max Unit
-30
-1
V
uA
100 nA
-1
-1.5
-3
V
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
38.5 53
m ohm
57.5 95
m ohm
-12
5
10
676
155
79
V
D
= -15V,
R
L
= 15
I
D
= -1A,
V
GE N
= -10V,
R
GE N
= 6
V
DS
=-15V,I
D
=-4.9A,V
GS
=-10V
V
DS
=-15V,I
D
=-4.9A,V
GS
=-4.5V
V
DS
=-15V, I
D
= - 4.9A,
V
GS
=-10V
3
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
C
IS S
C
OS S
C
RSS
c
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
11.8
13.4
69
35
18
9.3
3.6
3.6
ns
ns
ns
ns
nC
nC
nC
nC
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
