S T M8401
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
b
Condition
V
GS
= 0V, Is =1.7A
V
GS
= 0V, Is =-1.7A
N-Ch
P-Ch
Min Typ Max Unit
0.78 1.2
-0.82 -1.2
C
DRAIN-SOURCE DIODE CHARACTERISTICS
V
SD
V
Notes
a.Surface Mounted on FR4 Board, t
＜
10sec.
b.Pulse Test:Pulse Width
＜
300μs, Duty Cycle
＜
2%.
c.Guaranteed by design, not subject to production testing.
N-Channel
5
10
8
25
-55 C
20
25 C
I
D
, Drain Current(A)
6
I
D
, Drain Current (A)
V
GS
=10,9,8,7,6,5,4,3V
15
Tj=125 C
10
4
V
GS
=1.5V
2
5
0
0.0
0
0
1
2
3
4
5
6
0.5
1
1.5
2
2.5
3
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
1200
1000
2.2
Ciss
Figure 2. Transfer Characteristics
V
GS
=10V
V
G S
=10V
I
D
=9A
R
DS(ON)
, On-Resistance(Ohms)
1.8
1.4
1.0
0.6
0.4
0
-50
C, Capacitance (pF)
800
600
Coss
400
200
0
0
5
10
15
20
25
30
Crss
-25
0
25
50
75
100
125 150
Tj( C)
V
DS
, Drain-to Source Voltage (V)
I
D
, Drain Current(A)
Figure 3. Capacitance
Figure 4. On-Resistance Variation with
Drain Current and Temperature
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
