S T M8309
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
b
Condition
V
GS
= 0V, Is =1.7A
V
GS
= 0V, Is =-1.7A
N-Ch
P-Ch
Min Typ Max Unit
0.8
-0.8
1.2
-1.2
C
DRAIN-SOURCE DIODE CHARACTERISTICS
V
SD
V
Notes
a.Surface Mounted on FR4 Board, t
＜
10sec.
b.Pulse Test:Pulse Width
＜
300μs, Duty Cycle
＜
2%.
c.Guaranteed by design, not subject to production testing.
N-Channel
5
40
V
GS
=10V
32
V
GS
=5V
V
GS
=4.5V
20
V
GS
=4V
16
I
D
, Drain Current(A)
I
D
, Drain Current (A)
24
12
Tj=125 C
8
-55 C
4
0
25 C
V
GS
=3.5V
16
V
GS
=3V
8
0
0
0.5
1
1.5
2
2.5
3
0
0.7
1.4
2.1
2.8
3.5
4.2
V
DS
, Drain-to-Source Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
60
1.5
Figure 2. Transfer Characteristics
R
DS (ON)
, On-R es is tance
Normalized
50
1.4
1.3
1.2
1.1
1.0
0.9
-25
R
DS (on)
(m
W
)
V
G S
=10V
I
D
=7A
40
30
20
V
G S
=10V
10
1
V
G S
=4.5V
V
G S
=4.5V
I
D
=5A
1
8
16
24
32
40
0
25
50
75
100
125 150
T j( C )
I
D
, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
