S T M8358S
ELECTRICAL CHARACTERISTICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Symbol
V
SD
Condition
V
GS
= 0V, Is =1.7A
V
GS
= 0V, Is =-1.7A
N-Ch
P-Ch
Min Typ Max Unit
0.8
-0.79
1.2
-1.2
C
DRAIN-SOURCE DIODE CHARACTERISTICS
b
V
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
N-Channel
30
V
G S
=4.5V
25
V
G S
=4V
20
25
25 C
I
D
, Drain C urrent(A)
20
15
V
G S
=10V
I
D
, Drain C urrent (A)
-55 C
15
10
5
0
V
G S
=3V
10
T j=125 C
5
0
0
0.5
1
1.5
2
2.5
3
0
0.7
1.4
2.1
2.8
3.5
4.2
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
60
2.0
F igure 2. Trans fer C haracteris tics
R
DS (ON)
, On-R es is tance
Normalized
50
1.8
1.6
1.4
1.2
1.0
0.0
R
DS (on)
(m
W
)
V
G S
=4.5V
40
30
20
10
0
V
G S
=10V
V
G S
=10V
I
D
=7A
V
G S
=4.5V
I
D
=5A
1
5
10
15
20
25
0
25
50
75
100
125
150
T j( C )
I
D
, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
