S T M8305
P-Channel ELECTRICAL CHARACTERISTICS (T
A
= 25 C unless otherwise noted)
Parameter
5
S ymbol
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
c
Condition
V
GS
= 0V, I
D
= -250uA
V
DS
= -24V, V
GS
= 0V
V
GS
= 20V, V
DS
= 0V
V
DS
= V
GS
, I
D
= -250uA
V
GS
=
-
10V, I
D
=
-
5A
V
GS
=
-
4.5V, I
D
=
-
4A
V
DS
= -5V, V
GS
= -10V
V
DS
= -5V, I
D
=
-
5A
Min Typ
C
Max Unit
-30
-1
V
uA
100 nA
-1
-1.5
35
48
-12
9
770
180
110
3.3
12.6
9.6
49.5
27.8
14
7.2
2.3
3.2
15
11
56
32
16
8
2.7
3.8
885
205
133
-3
45
60
V
m ohm
m ohm
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
A
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
Gate resistance
C
IS S
C
OS S
C
RSS
Rg
c
V
DS
=-15V, V
GS
= 0V
f =1.0MH
Z
V
GS
=0V, V
DS
= 0V, f=1.0MH
Z
V
DD
= -15V
R
L
= 3 ohm
V
GS
= -10V
R
GE N
= 3 ohm
V
DS
=-15V, I
D
=-5A,V
GS
=-10V
V
DS
=-15V, I
D
=-5A,V
GS
=-4.5V
ohm
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=-15V, I
D
= -5 A
V
GS
=-10V
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
