S T M8301
S amHop Microelectronics C orp.
Apr.28 2005 ver1.1
Dual E nhancement Mode Field E ffect Transistor ( N and P Channel)
P R ODUC T
V
DS S
30V
(N-C hannel)
R
DS (ON) ( m
W
)
Max
P R ODUC T S UMMAR Y
(P -C hannel)
V
DS S
-30V
I
D
7A
I
D
-4.5A
R
DS (ON) ( m
W
)
Max
25 @ V
G S
= 10V
42 @ V
G S
= 4.5V
D
1
8
60 @ V
G S
= -10V
80 @ V
G S
= -4.5V
D
1
7
D
2
6
D
2
5
S O-8
1
1
2
3
4
S
1
G
1
S
2
G
2
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ Ta
-P ulsed
b
a
S ymbol
V
DS
V
GS
25 C
70 C
I
D
I
DM
I
S
P
D
T
J
, T
S TG
N-C hannel P-C hannel
30
20
7
6
29
1.7
2
1.44
-55 to 150
-30
20
-4.5
-3.8
-18
-1.7
Unit
V
V
A
A
A
A
W
C
Drain-S ource Diode Forward C urrent
a
Maximum P ower Dissipation
a
Ta= 25 C
Ta=70 C
Operating Junction and S torage
Temperature R ange
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient
a
1
R
JA
62.5
C /W
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
