STM8020
SamHop Microelectronics Corp.
Mar. 30 2007
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V
DSS
35V
F E AT UR E S
( m
Ω
) Max
I
D
12A
R
DS(ON)
S uper high dense cell design for low R
DS (ON
).
R ugged and reliable.
S urface Mount P ackage.
E S D P rotected.
9 @ V
GS
= 10V
13 @ V
GS
= 4.5V
SO-8
1
ABSOLUTE MAXIMUM RATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous @ Ta
-P ulsed
b
a
S ymbol
V
DS
V
GS
25 C
70 C
I
DM
I
S
P
D
Ta=70 C
I
D
Limit
35
20
12
9.6
48
1.7
2.5
Unit
V
V
A
A
A
A
W
Drain-S ource Diode Forward C urrent
a
Maximum P ower Dissipation
Operating Junction and S torage
Temperature R ange
a
Ta= 25 C
1.6
T
J
, T
S TG
-55 to 150
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient
a
R
JA
50
C /W
1
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
