S T M7822A
B V
DS S
, Normalized
Drain-S ource B reakdown V oltage
V th, Normalized
G ate-S ource T hres hold V oltage
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-50 -25
0
25
50
75
100 125
V
DS
=V
G S
I
D
=250uA
1.15
I
D
=250uA
1.10
1.05
1.00
0.95
0.90
0.85
-50 -25
0
25
50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
with T emperature
42
F igure 6. B reakdown V oltage V ariation
with T emperature
20
10
g
F S
, T rans conductance (S )
28
21
14
7
0
0
5
10
15
V
DS
=10V
20
25
Is , S ource-drain current (A)
35
1
0
0.5
0.6
0.7
0.8
T
J
=25 C
0.9
1.0
I
DS
, Drain-S ource C urrent (A)
V
S D
, B ody Diode F orward V oltage (V )
F igure 7. T rans conductance V ariation
with Drain C urrent
5
I
D
, Drain C urrent (A)
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
60
V
G S
, G ate to S ource V oltage (V )
S
(O
4
3
2
1
0
0
V
DS
=16V
I
D
=14A
L im
it
10
10
10
0m
s
N)
ms
R
D
11
1s
DC
0.1
0.03
V
G S
=10V
S ingle P ulse
T c=25 C
0.1
1
10
20
50
6
12 18
24
30
36 42 48
Qg, T otal G ate C harge (nC )
V
DS
, Drain-S ource V oltage (V )
F igure 9. G ate C harge
F igure 10. Maximum S afe
O perating Area
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
