S T M7064N
S amHop Microelectronics C orp.
Aug 17
,
2005
N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V
DS S
30V
F E AT UR E S
( m
W
) T yp
I
D
16A
R
DS (ON)
S uper high dense cell design for low R
DS (ON
).
6 @ V
G S
= 10V
8.5 @ V
G S
= 4.5V
R ugged and reliable.
S urface Mount P ackage.
Thermal P ad E xposed with S tandard S OP -8 Outline
Bottom-side
Drain Contact
D
DD
S OP -8
E xpos ed
D
D
G
SS
1
S
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous
a
@ T
J
=25 C
b
-P ulsed
Drain-S ource Diode Forward C urrent
a
Maximum P ower Dissipation
a
Operating Junction and S torage
Temperature R ange
S ymbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
S TG
Limit
30
20
16
50
1.7
3.0
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient
a
R
JA
40
C /W
1
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
