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STM6922 参数 Datasheet PDF下载

STM6922图片预览
型号: STM6922
PDF下载: 下载PDF文件 查看货源
内容描述: 双N信道E nhancement模式F屈服ê ffect晶体管 [Dual N-Channel E nhancement Mode F ield E ffect Transistor]
分类和应用: 晶体晶体管
文件页数/大小: 7 页 / 142 K
品牌: SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
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S T M6922
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
5
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =1.7A
Min Typ Max Unit
0.78
1.2
V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
30
V
G S
=10V
V
G S
=5V
24
15
12
V
G S
=4V
I
D
, Drain C urrent(A)
V
G S
=4.5V
18
I
D
, Drain C urrent (A)
T j=125 C
9
-55 C
6
12
V
G S
=3.5V
6
0
0
0.5
1.0
1.5
2.0
3
0
0.0
25 C
2.5
3.0
0.9
1.8
2.7
3.6
4.5
5.4
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
F igure 2. Trans fer C haracteris tics
60
1.75
R
DS (ON)
, On-R es is tance
Normalized
50
1.60
1.45
1.30
1.15
1.00
0.85
V
G S
=4.5V
I
D
=5A
V
G S
=10V
I
D
=6A
R
DS (on)
(m
)
40
30
20
V
G S
=10V
10
1
V
G S
=4.5V
1
6
12
18
24
30
0
25
50
75
100
125
150
T j( C )
I
D
, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3