S T M6930
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =1.7A
Min Typ Max Unit
0.8
1.2
V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
d.Guaranteed when external R g=6 ohm and tf < tf max
20
V
G S
=10,9,8,7,6,5V
16
20
25
25 C
-55 C
I
D
, Drain C urrent(A)
12
I
D
, Drain C urrent (A)
V
G S
=4V
T j=125 C
15
8
10
4
V
G S
=3V
0
0
1
2
3
4
5
6
5
0
0.0
1.0
2.0
3.0
4.0
5.0
6.0
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
1500
1.6
F igure 2. Trans fer C haracteris tics
V
G S
=10V
R
DS (ON)
, On-R es is tance
Normalized
1250
1.4
1.2
1.0
0.6
0.4
0
-50
C , C apacitance (pF )
V
G S
=10V
I
D
=4.8A
1000
750
500
250
0
C rs s
0
5
10
15
20
C is s
C os s
25
30
-25
0
25
50
75
100
125 150
T j=( C )
V
DS
, Drain-to S ource Voltage (V )
I
D
, Drain C urrent(A)
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
