S T M6913
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
S ymbol
V
SD
Condition
V
GS
= 0V, Is =1.7A
Min Typ Max Unit
0.8
1.2
V
C
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Notes
a.S urface Mounted on FR 4 Board, t 10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
20
V
G S
=10,9,8,7,6,5V
16
20
V
G S
=4V
12
25
I
D
, Drain C urrent(A)
I
D
, Drain C urrent (A)
15
8
10
-55 C
5
0
0.0
T j=125 C
25 C
4
V
G S
=3V
0
0
2
4
6
8
10
12
0.8
1.6
2.4
3.2
4.0
4.8
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
1200
1000
1.6
1.4
C is s
F igure 2. Trans fer C haracteris tics
V
G S
=10V
R
DS(ON)
, On-Resistance
(Normalized)
C , C apacitance (pF )
V
G S
=10V
I
D
=6A
800
600
400
200
0
0
C rs s
5
10
1.2
1.0
0.8
0.6
0
-50
C os s
15
20
25
30
-25
0
25
50
75
100
125 150
T j=( C )
V
DS
, Drain-to S ource Voltage (V )
I
D
, Drain C urrent(A)
F igure 3. C apacitance
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
