S TM6913A
1.3
1.15
1.10
1.05
V
DS =V G S
ID=250uA
1.2
I
D=250uA
1.1
1.0
0.9
1.00
0.95
0.90
0.85
0.8
0.7
0.6
-50 -25
0
25 50
75 100 125
-50 -25
0
25 50
75 100 125
T j, J unction T emperature ( C )
T j, J unction T emperature ( C )
F igure 6. B reakdown V oltage V ariation
with T emperature
F igure 5. G ate T hreshold V ariation
with T emperature
15
12
20.0
V
G S =0V
10.0
9
6
3
V
DS =10V
15
1.0
0
0
5
10
20
0.2
0.4
0.6
0.8
1.0
1.2
IDS , Drain-S ource C urrent (A)
V S D, B ody Diode F orward V oltage (V )
F igure 7. T ransconductance V ariation
with Drain C urrent
F igure 8. B ody Diode F orward V oltage
V ariation with S ource C urrent
10
50
V
DS =15V
=6A
t
i
m
i
L
1
8
6
4
)
0
m
I
D
10
1
N
s
O
(
1
R DS
m
0
0
s
1
s
D
C
0.1
V
G S =10V
S ingle P ulse
=25 C
2
0
T
A
0.03
0.1
1
10
30 50
12
Qg, T otal G ate C harge (nC )
0
3
9
15 18 21 24
6
V
DS , Drain-S ource V oltage (V )
F igure 10. Maximum S afe
Operating Area
F igure 9. G ate C harge
4
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
