S T M6912
S amHop Microelectronics C orp.
Aug,18 2005 ver 1.2
Dual N-C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
V
DS S
30V
F E AT UR E S
( m
W
) Max
I
D
6A
R
DS (ON)
S uper high dense cell design for low R
DS (ON
).
32 @ V
G S
= 10V
57 @ V
G S
= 4.5V
R ugged and reliable.
S urface Mount P ackage.
D
1
8
D
1
7
D
2
6
D
2
5
S O-8
1
1
2
3
4
S
1
G
1
S
2
G
2
ABS OLUTE MAXIMUM R ATINGS (T
A
=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous
a
@ T
J
=125 C
b
-P ulsed
Drain-S ource Diode Forward C urrent
a
Maximum P ower Dissipation
a
Operating Junction and S torage
Temperature R ange
S ymbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
S TG
Limit
30
20
6
30
1.7
2
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient
a
R
JA
62.5
C /W
1
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
