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STM4639 参数 Datasheet PDF下载

STM4639图片预览
型号: STM4639
PDF下载: 下载PDF文件 查看货源
内容描述: P沟道é nhancement模式场效应晶体管 [P-Channel E nhancement Mode Field Effect Transistor]
分类和应用: 晶体晶体管场效应晶体管
文件页数/大小: 8 页 / 546 K
品牌: SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
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S T M4639
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
Diode Forward Voltage
Maximum Body-Diode Continuous Current
S ymbol
V
SD
Condition
V
GS
= 0V, Is = -1.7A
V
GS
= 0V
Min Typ Max Unit
-0.7 -1.2
-25
V
A
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
C
Is
Notes
a.Surface Mounted on FR 4 Board, t <=10sec.
b.Pulse Test:Pulse Width 300us, Duty Cycle 2%.
c.Guaranteed by design, not subject to production testing.
25
V
G S
=-10V
20
V
G S
=-4.5V
20
15
- I
D
, Drain C urrent(A)
15
V
G S
=-2.5V
-I
D
, Drain C urrent (A)
10
5
-55 C
1
0
T j=125 C
0
0.5
1.0
1.5
25 C
2.0
2.5
3.0
10
V
G S
=-2V
5
0
0
0.5
1
1.5
2
2.5
3
-V
DS
, Drain-to-S ource Voltage (V )
-V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
18
15
F igure 2. Trans fer C haracteris tics
1.8
R
DS (ON)
, On-R es is tance
Normalized
1.6
1.4
V
G S
=-10V
I
D
=-14A
R
DS (on)
(m
W
)
12
9
6
3
0
V
G S
=4V
V
G S
=10V
1.2
V
G S
=-4V
I
D
=-10A
1.0
0.8
1
5
10
15
20
25
0
25
50
75
100
125
150
T j( C )
-I
D
, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
3
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature