STG8810
Ver 1.0
ELECTRICAL CHARACTERISTICS
(
T
A
=25
°
C unless otherwise noted
)
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V
uA
uA
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
BV
DSS
Zero Gate Voltage Drain Current
I
DSS
Gate-Body Leakage Current
I
GSS
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(th)
V
GS
=0V , I
D
=250uA
V
DS
=16V , V
GS
=0V
20
1
±10
V
GS
= ±12V , V
DS
=0V
V
DS
=V
GS
, I
D
=250uA
V
GS
=4.5V , I
D
=7A
V
GS
=4V , I
D
=6.8A
V
GS
=3V , I
D
=6.3A
V
GS
=2.5V , I
D
=6A
V
DS
=5V , I
D
=7A
0.5
0.85
16.5
17
20
23
12
1.5
20
21
25
28
V
m ohm
m ohm
m ohm
m ohm
S
pF
pF
pF
R
DS(ON)
Drain-Source On-State Resistance
g
FS
Forward Transconductance
c
DYNAMIC CHARACTERISTICS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
SWITCHING CHARACTERISTICS
t
D(ON)
Turn-On Delay Time
tr
t
D(OFF)
tf
Q
g
Q
gs
Q
gd
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
c
V
DS
=10V,V
GS
=0V
f=1.0MHz
815
215
180
V
DD
=10V
I
D
=1A
V
GS
=4.5V
R
GEN
=10 ohm
V
DS
=10V,I
D
=7A,
V
GS
=4.5V
28
83
63
41
11.5
2.4
5
ns
ns
ns
ns
nC
nC
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
V
SD
Diode Forward Voltage
b
V
GS
=0V,I
S
=2.0A
0.79
2.0
1.2
A
V
Notes
_
a.Surface Mounted on FR4 Board,t < 10sec.
_
_
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
Nov,26,2008
2
www.samhop.com.tw
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
