S T G 8211
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
=25 C unless otherwise noted)
Parameter
S ymbol
Condition
Min Typ
C
Max Unit
0.75 1.2
V
DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS
b
Diode Forward Voltage
V
GS
= 0V, Is =1.7A
V
SD
Notes
a.Surface Mounted on FR4 Board, t
＜
10sec.
b.Pulse Test:Pulse Width
＜
300μs, Duty Cycle
＜
2%.
c.Guaranteed by design, not subject to production testing.
25
V G S =4V
15
-55 C
12
20
I
D
, Drain C urrent (A)
15
I
D
, Drain C urrent (A)
V G S =2.5V
9
10
V G S =1.5V
6
125 C
3
0
25 C
0
0.3
0.6
0.9
1.2
1.5
1.8
5
0
0
0.5
1
1.5
2
2.5
3
V
DS
, Drain-to-S ource Voltage (V )
V
G S
, G ate-to-S ource Voltage (V )
F igure 1. Output C haracteris tics
24
F igure 2. Trans fer C haracteris tics
2.5
R
DS (ON)
, On-R es is tance
Normalized
20
2.2
1.9
1.6
1.3
1.0
0
V
G S
=4V
I
D
=5A
V
G S
=2.5V
I
D
=3A
R
DS (on)
(m
W
)
16
12
V
G S
=2.5V
V
G S
=4V
8
4
0
0
5
10
15
20
25
0
25
50
75
100
125
150
T j( C )
I
D
, Drain C urrent (A)
T j, J unction T emperature ( C )
F igure 3. On-R es is tance vs . Drain C urrent
and G ate V oltage
F igure 4. On-R es is tance Variation with
Drain C urrent and Temperature
3
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
