S T G 2507
E LE CTR ICAL CHAR ACTE R IS TICS (T
A
= 25 C unless otherwise noted)
Parameter
OFF CHAR ACTE R IS TICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
BV
DS S
I
DS S
I
GS S
V
GS (th)
R
DS (ON)
I
D(ON)
g
FS
C
IS S
C
OS S
C
RSS
c
S ymbol
Condition
V
GS
= 0V, I
D
= 250uA
V
DS
= -16V, V
GS =
0V
V
GS
= 12V,V
DS
= 0V
V
DS
= V
GS
, I
D
= 250uA
V
GS =
-4.5V,I
D
= - 6 A
V
GS
=-2.5V,I
D
=- 4 A
V
DS
=-5V,V
GS
=
-
4.5V
V
DS
= -5V, I
D
= -6 A
Min Typ
C
Max Unit
-20
-1
V
uA
100 nA
-0.5
-0.8 -1.5
15 17
20 25
22
1782
488
77
V
m ohm
m ohm
ON CHAR ACTE R IS TICS
b
Gate Threshold Voltage
Drain-S ource On-S tate R esistance
On-S tate Drain Current
Forward Transconductance
-20
S
P
F
P
F
P
F
DYNAMIC CHAR ACTE R IS TICS
c
Input Capacitance
Output Capacitance
R everse Transfer Capacitance
V
DS
=-10V, V
GS
= 0V
f =1.0MH
Z
S WITCHING CHAR ACTE R IS TICS
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-S ource Charge
Gate-Drain Charge
t
D(ON)
t
r
t
D(OFF)
t
f
Q
g
Q
gs
Q
gd
V
DD
= -10V,
I
D
= 1A,
V
GE N
= -4.5V,
R
L
= 10
ohm
R
GE N
= 6
ohm
V
DS
=-10V, I
D
= 6A,
V
GS
=-4.5V
6.1
14.8
59
29.7
30.3
4.5
6.5
ns
ns
ns
ns
nC
nC
nC
2
SAMHOP [ SAMHOP MICROELECTRONICS CORP. ]
